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New technical paper titled “Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction” from researchers at Ningbo Institute of Materials ...
A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
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Chinese scientists claim carbon nanotube transistor breakthrough — AI performance boosts from Gate All Around design
It is close to impossible to get into a Chinese semiconductor laboratory, but Chinese scientists are inclined to share the results of their work. Thus, our colleagues from TechXplore have found a ...
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